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Electrical Reliability of Cu and Low-K Dielectric Integration

Published online by Cambridge University Press:  10 February 2011

S. Simon Wong ,
Alvin L. S. Loke ,
Jeffrey T. Wetzel ,
Paul H. Townsend ,
Raymond N. Vrtis  and
Melvin P. Zussman
S. Simon Wong
Affiliation:
Center for Integrated Systems, Stanford University, CIS 202 MC 4070, Stanford, CA 94305
Alvin L. S. Loke
Affiliation:
Center for Integrated Systems, Stanford University, CIS 202 MC 4070, Stanford, CA 94305
Jeffrey T. Wetzel
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., 3501 Ed Bluestein Boulevard, Austin, TX 78721
Paul H. Townsend
Affiliation:
The Dow Chemical Company, 1712 Building, Midland, MI 48674
Raymond N. Vrtis
Affiliation:
Sc humacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
Melvin P. Zussman
Affiliation:
HD MicroSystems, 334-127 Route 141 Murphy Road, Wilmington, DE 19880
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Abstract

The recent demonstrations of manufacturable multilevel Cu metallization have heightened interest to integrate Cu and low-K dielectrics for future integrated circuits. For reliable integration of both materials, Cu may need to be encapsulated by barrier materials since Cu ions (Cu+) might drift through low-K dielectrics to degrade interconnect and device integrity. This paper addresses the use of electrical testing techniques to evaluate the Cu+ drift behavior of low-K polymer dielectrics. Specifically, bias-temperature stress and capacitance-voltage measurements are employed as their high sensitivities are well-suited for examining charge instabilities in dielectrics. Charge instabilities other than Cu+ drift also exist. For example, when low-K polymers come into direct contact with either a metal or Si, interface-related instabilities attributed to electron/hole injection are observed. To overcome these issues, a planar Cu/oxide/polymer/oxide/Si capacitor test structure is developed for Cu+ drift evaluation. Our study shows that Cu+ ions drift readily into poly(arylene ether) and fluorinated polyimide, but much more slowly into benzocyclobutene. A thin nitride cap layer can prevent the penetration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 317
Copyright
Copyright © Materials Research Society 1998

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