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Electrodeposition of Group III Doped PbTe Nanowires

Published online by Cambridge University Press:  01 February 2011

Peter Hillman  and
Angelica M Stacy
Peter Hillman
Affiliation:
ph82@berkeley.edu, UC Berkeley, Department of Chemistry, Berkeley, California, United States
Angelica M Stacy
Affiliation:
astacy@berkeley.edu, UC Berkeley, Department of Chemistry, Berkeley, California, United States
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Abstract

Nanowire arrays of PbTe were electrodeposited into porous alumina templates with 40nm pores. Citric acid was used as a complexing agent for HTeO2 + shifting the reduction potential of HTeO2 +/Te closer to that of Pb2+/Pb. Compositional analysis of the wires grown with the complexing agent show a 1:1 ratio of Pb:Te without any excess tellurium. Group III elements (In3+ and Tl+) can be added to the deposition solution and incorporated into the nanowires. It is proposed that indium incorporates into the PbTe lattice in a high energy interstitial site causing the lattice parameter to increase linearly with increasing indium incorporation. The addition of thallium to the deposition solution leads to a mixture of PbTe and TlTe nanowires. Upon annealing, the TlTe melts incongruently to Tl5Te3, which then alloys with PbTe, thereby increasing the lattice parameter.

Keywords

thermoelectricnanoscaleelectrodeposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-Q09-04
Copyright
Copyright © Materials Research Society 2010

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