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Electromigration in Al And Al-Alloy Thin-Film Conductors
Published online by Cambridge University Press: 22 February 2011
Abstract
Temperature-ramp Resistance Analysis to Characterize Electromigration (TRACE) has been applied to thin-film Al and Al-alloy conductors. Results have yielded activation energies in agreement with literature values. The TRACE technique has been used to determine the effect of H2 on the kinetics of electromigration damage (EMD) for both Al and Al-2%Cu thin-film conductors.
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- Copyright © Materials Research Society 1984
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