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Electromigration Modeling of Blech Experiment with Comparison to Recent Experimental Data

Published online by Cambridge University Press:  10 February 2011

Zhineng Fan ,
M. A. Korhonen  and
C.-Y. Li
Zhineng Fan
Affiliation:
Dept of MS&E, Cornell University, Ithaca, NY 14850, zf14@comell.edu
M. A. Korhonen
Affiliation:
Dept of MS&E, Cornell University, Ithaca, NY 14850, zf14@comell.edu
C.-Y. Li
Affiliation:
Dept of MS&E, Cornell University, Ithaca, NY 14850, zf14@comell.edu
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Abstract

Finite element analysis is applied to simulate electromigration in a copper line/tungsten junction, which is a typical structure in Blech experiments adopted to measure the electromigration drift velocity by edge displacement. Because the specific resistivity of tungsten is higher than that of copper, the electric current crowds at the corner where the underlying tungsten bar connects to the edge of the copper line. Therefore, material in the corner is depleted faster than that in other places of the copper/tungsten interface. Our simulation reveals that a stress that may be high enough to crack the interface is also built up in the corner. The evolution of the line resistance under various current densities is calculated from our model and compared to recent experiment results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 445
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Korhonen, M. A., Borgesen, P., Tu, K. N. and Li, Che-Yu J. Appl. Phys. 73, 3790 (1993).Google Scholar
2. Knowlton, B. D., Clement, J. J. and Thompson, C. V., J. Appl. Phys. 81, 6073 (1997).Google Scholar
3. Rzepka, S., Korhonen, M. A., Weber, E. R. and Li, C.-Y. in Materials Reliability in Microelectronics VII, edited by Clement, J. J., Keller, R. R., Krisch, K. S., Sanchez, J. E. and Suo, Z. (Mater. Res. Soc Proc. 473, San Francisco, CA, 1997) pp. 329–335.Google Scholar
4. Hu, C- K., Lee, K. Y., Gignac, L. and Carruthers, R., Thin Solid Films 308–309, 443 (1997).Google Scholar
5. Hu, C.-K., Rosenberg, R., and Lee, K. Y., Appl. Phys. Lett. 74, 2945 (1999)Google Scholar
6. Blech, I. A., J. Appl. Phys. 47, 1203 (1976).Google Scholar
7. Rothman, S.J. and Peterson, N. L., Phys. Status Solidi 35, 305, 1969.Google Scholar
8. Lingk, C. and Gross, M.E., J. Appi. Phys. 84, 5547 (1998).Google Scholar
9. Dille, J., Delplancke, J.-L., Charlier, J. and Winand, R., Grain Size and Mechanical Properties - Fundamentals and Applications, edited by Otooni, M. A., Armstrong, R. W., Grant, N. J. and Ishizaki, K. (Mater. Res. Soc. Proc. 362, Boston, MA, 1995), pp. 231–237.Google Scholar