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Electron Cyclotron Resonance Hydrogenation of Poly-Si Thin Film Transistors on SiO2/Si Substrates

Published online by Cambridge University Press:  16 February 2011

Gand Liu ,
Robert A. Ditizio ,
Stephen J. Fonash  and
Nang Tran
Gand Liu
Affiliation:
Center for Electronic Materials and Processing, Pennsylvania State University, University Park, PA
Robert A. Ditizio
Affiliation:
Center for Electronic Materials and Processing, Pennsylvania State University, University Park, PA
Stephen J. Fonash
Affiliation:
Center for Electronic Materials and Processing, Pennsylvania State University, University Park, PA
Nang Tran
Affiliation:
3M Information and Imaging Technology Sector, St. Paul, MN.
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Abstract

We report the results of an ECR hydrogenation time-behavior study on polycrystalline silicon thin film transistors. The device characteristics, such as mobility, subthreshold slope, threshold voltage, off current and on/off current ratio, were measured as a function of the passivation time. It was found that there is an optimal passivation time for this particular TFT structure, and overexposure to ECR hydrogen plasma may cause the degradation of some device parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 121
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Hseih, B., Hatalis, M. K., Greve, D. W., IEEE Trans Electron Device, ED-35, 1842 (1988).Google Scholar
2. Wu, I-Wei, Huang, Tiao-Yuan, Jackson, Warren B.. Lewis, Alan G., and Chiang, Anne, IEEE Electron Device Lett., 12, 181 (1991).Google Scholar
3. Ditizio, R. A., Liu, G., and Fonash, S. J., Appl. Phys. Lett., 56(12), 1140 (1990).Google Scholar
4. De Groot, A. W., Card, Howard C., IEEE Trans Electron Device, ED-31, 1365 (1984).Google Scholar
5. De Groot, A. W., Card, Howard C., IEEE Trans Electron Device, ED-31, 1370 (1984.Google Scholar