Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Masood, A.
Aslam, M.
Tamor, M. A
and
Potter, T. J.
1992.
Synthesis and electrical characterization of boron-doped thin diamond films.
Applied Physics Letters,
Vol. 61,
Issue. 15,
p.
1832.
Werner, M.
Obermeier, E.
Harper, R.E.
Johnston, C.
and
Buckley-Golder, I.M.
1992.
Characterisation of double-layer polycrystalline diamond films.
Diamond and Related Materials,
Vol. 1,
Issue. 5-6,
p.
508.
Kumta, P. N.
and
Risbud, S. H.
1994.
Rare-earth chalcogenides ? an emerging class of optical materials.
Journal of Materials Science,
Vol. 29,
Issue. 5,
p.
1135.
Zhang, Binglin
Shen, Shupo
Wang, Jian'en
He, Jintian
Shanks, Howard R
Leksono, Moeljanto W
and
Girvan, Robert
1994.
Blue-Green Electroluminescence of Free-Standing Diamond Thin Films.
Chinese Physics Letters,
Vol. 11,
Issue. 4,
p.
235.
Fries Carr, S.
Weimer, J.A.
Bang-Hung Tsao
and
Wu, R.L.C.
1995.
High temperature diamond thin film for capacitor applications.
p.
271.
Sauer, R.
1995.
Diamant als Elektronikmaterial.
Physikalische Blätter,
Vol. 51,
Issue. 5,
p.
399.
Chalker, Paul R.
M., Ian
and
Golder, Buckley
1995.
The Current And Future Status Of Diamond in Electronics.
MRS Proceedings,
Vol. 416,
Issue. ,
Xiao-ping, Wang
Li-jun, Wang
Yue-e, Xu
and
Shu-po, Shen
1997.
Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films.
Chinese Physics Letters,
Vol. 14,
Issue. 10,
p.
772.
Sauer, Rolf
1999.
Advances in Solid State Physics 38.
Vol. 38,
Issue. ,
p.
125.
Sakaguchi, Isao
N.-Gamo, Mikka
Kikuchi, Yuko
Yasu, Eiji
Haneda, Hajime
Suzuki, Toshimitsu
and
Ando, Toshihiro
1999.
Sulfur: A donor dopant forn-type diamond semiconductors.
Physical Review B,
Vol. 60,
Issue. 4,
p.
R2139.
Nishitani-Gamo, Mikka
Yasu, Eiji
Xiao, Changyong
Kikuchi, Yuko
Ushizawa, Koichi
Sakaguchi, Isao
Suzuki, Toshimitsu
and
Ando, Toshihiro
2000.
Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties.
Diamond and Related Materials,
Vol. 9,
Issue. 3-6,
p.
941.
Teraji, T.
Koizumi, S.
and
Kanda, H.
2000.
Ohmic Contacts for Phosphorus-Doped n-Type Diamond.
physica status solidi (a),
Vol. 181,
Issue. 1,
p.
129.
Teraji, T.
Koizumi, S.
and
Kanda, H.
2000.
Ga Ohmic contact for n-type diamond by ion implantation.
Applied Physics Letters,
Vol. 76,
Issue. 10,
p.
1303.
Nishitani-Gamo, Mikka
Xiao, Changyong
Zhang, Yafei
Yasu, Eiji
Kikuchi, Yuko
Sakaguchi, Isao
Suzuki, Toshimitsu
Sato, Yoichiro
and
Ando, Toshihiro
2001.
Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition.
Thin Solid Films,
Vol. 382,
Issue. 1-2,
p.
113.
Teraji, Tokuyuki
Mitani, Satoshi
Wang, Chunlei
and
Ito, Toshimichi
2002.
Growth of high-quality homoepitaxial CVD diamond films at high growth rate.
Journal of Crystal Growth,
Vol. 235,
Issue. 1-4,
p.
287.
2002.
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements.
Vol. 41A2a,
Issue. ,
p.
1.
Fujii, Sachiko
Hino, Shigeru
and
Kobayashi, Takeshi
2003.
Improved surface morphology of sulfur-doped homoepitaxial diamond films by plasma CVD method with SF6 Grading–Doping profile.
Applied Surface Science,
Vol. 216,
Issue. 1-4,
p.
596.
Sauer, Rolf
2003.
Thin-Film Diamond I.
Vol. 76,
Issue. ,
p.
379.
Thonke, Klaus
2003.
The boron acceptor in diamond.
Semiconductor Science and Technology,
Vol. 18,
Issue. 3,
p.
S20.
Hamada, Mitsuhiro
Teraji, Tokuyuki
and
Ito, Toshimichi
2003.
Field-induced effects of implanted Ga on high electric field diamond devices fabricated by focused ion beam.
Applied Surface Science,
Vol. 216,
Issue. 1-4,
p.
65.