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Enhanced adhesion of Cu film on a low-k material by using Ti glue layer, B dopant and N2 plasma treatment

Published online by Cambridge University Press:  01 February 2011

Y.K. Ko ,
S. Lee ,
H.J. Yang ,
C. Shim ,
D. Jung  and
J.G. Lee
Y.K. Ko
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
S. Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
H.J. Yang
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
C. Shim
Affiliation:
Department of Physics, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
D. Jung
Affiliation:
Department of Physics, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
J.G. Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
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Abstract

Adhesion property of Cu film on a low-k material was investigated. The low-k films deposited using a mixture of hexamethyldisilane(HMDS) and para-xylene had a dielectric constant as low as 2.7 and thermal stability up to 400°C. In this work, Ti glue layer, boron dopant, and N2 plasma treatment were applied to improve adhesion between Cu and the low-k films. Adhesion property was significantly enhanced by N2 plasma-treatment on the low-k film and boron dopant in Cu film. This enhanced adhesion was attributed to the formation of new binding states between Ti and the plasma-treated surface of the low-k film and to the diffusion of B from Cu to Ti and low-k films. Cu(B)/Ti/low-k film annealed at 350°C withstood an applied load of about 23 N during the scratch test.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.27
Copyright
Copyright © Materials Research Society 2003

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