Article contents
Epitaxial Growth of α-Fe(111) ON Si(111) Studied by X-RAY Diffraction and Transmission Electron Microscopy
Published online by Cambridge University Press: 25 February 2011
Abstract
Epitaxial α-Fe films have been grown on Si(111) substrates at 30 and 320°C by electron beam evaporation in an ultra high vacuum environment to a thickness between a few hundred and several thousand Angstroms. Conventional θ – 2θ x-ray diffraction and transmission electron microscopy show that the α-Fe films are oriented with the Fe(1ll) plane parallel to the Si(111) plane and with the Fe[110] direction parallel to the Si[110] direction in the plane of the substrate.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1991
References
REFERENCES
- 2
- Cited by