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Epitaxial Regrowth of a-GaAs/(100) Silicon By Excimer Laser Annealing at 248 nm
Published online by Cambridge University Press: 28 February 2011
Abstract
Excimer laser annealing at 248 nm has resulted in the recrystallization of a-GaAs on (100) silicon. An AlAs encapsulation layer was found to be necessary to prevent the loss of arsenic during laser annealing. An energy density of 105 mJ/cm2 was the critical energy density which gave optimum results. Field effect transistors were fabricated on the regrown (100) GaAs utilizing ion implantation for the n-type channel, and resulted in a transconductance of 70–80 mS/mm.
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- Copyright © Materials Research Society 1986