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Evolution of the Optical Response from a Very Narrow Gap Semiconductor to a Metallic Material in (FexMn1−x)Si
Published online by Cambridge University Press: 15 February 2011
Abstract
A study of the electrical resisitivity of (Fex.Mn1−x)Si with 0 < x < 1 indicates a crossover from an almost semiconducting state in FeSi to a metallic one in MnSi. Optical measurements show that the electronic structure and the vibrational behaviour appears to be essentially uneffected by the Fe/Mn substitution. Instead, a change of the free carrier density occurs, yielding a temperature and stoichiometry dependent plasma frequency.
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- Copyright © Materials Research Society 1996
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