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Excitation Energy Dependence of Photoinduced Absorption in Intrinsic a-Si:H

Published online by Cambridge University Press:  10 February 2011

N. Schultz ,
Z.V. Vardeny  and
P.C. Taylor
N. Schultz
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
Z.V. Vardeny
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
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Abstract

We have studied subgap absorption of intrinsic a-Si:H induced by below- and above-gap photo-excitation. We find very similar photoinduced subgap absorption spectra when excited with 2.4 eV or 1.2 eV light. Both spectra exhibit a power-law dependence on laser intensity ΔT ∼ 1a, where a is 0.5 and 0.7 for 2.4 and 1.2 eV excitation energy, respectively. This behavior indicates a change in the recombination mechanism as a function of excitation energy. The PA spectrum excited at 1.2 eV shows a strong dependence on bias illumination. Bias illumination bleaches the absorption according to a power-law as ΔT = c(Ebias)·Iβ, where β is approximately 0.85 and independent of probe energy and bias energy. The parameter c(Ebias) increases superlinearly with bias illumination energy for Ebias > 1.7 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 763
Copyright
Copyright © Materials Research Society 1998

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References

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