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Expanding Thermal Plasma Deposition of Silicon Dioxide-Like Films for Microelectronic Devices

Published online by Cambridge University Press:  01 February 2011

M. Creatore ,
M.F.A.M. van Hest ,
J. Benedikt  and
M.C.M. van de Sanden
M. Creatore
Affiliation:
Department of Applied Physics, Equilibrium and Transport in Plasmas Eindhoven University of Technology, P.O.Box 513, 5600 MB Eindhoven, The Netherlands
M.F.A.M. van Hest
Affiliation:
Department of Applied Physics, Equilibrium and Transport in Plasmas Eindhoven University of Technology, P.O.Box 513, 5600 MB Eindhoven, The Netherlands
J. Benedikt
Affiliation:
Department of Applied Physics, Equilibrium and Transport in Plasmas Eindhoven University of Technology, P.O.Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Department of Applied Physics, Equilibrium and Transport in Plasmas Eindhoven University of Technology, P.O.Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

In this paper we report on the use of the expanding thermal plasma (ETP) technique for the deposition of carbon-free SiO2 films by means of hexamethyldisiloxane (HMDSO)/oxygen mixtures, at a growth rate of 8-10 nm/s. Information concerning the film chemical properties and refractive index/growth rate have been obtained by means of FTIR measurements and in situ single wavelength ellipsometry, respectively. Because of its geometry, the ETP configuration has proven its suitability for studies concerning the fragmentation paths of the HMDSO molecule and the reactions occurring in the plasma phase. In this framework, very recent results obtained by coupling the SiO2 film-deposition set up with a very sensitive, high spectral resolution- absorption technique, Cavity Ring Down Spectroscopy, are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A19.3
Copyright
Copyright © Materials Research Society 2002

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References

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