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Fabrication and Photoelectrical Properties of AZO/SiO2/p-Si Based Device

Published online by Cambridge University Press:  21 March 2011

Z.Q. Ma
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
B. He
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
J. Xu
Affiliation:
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Hubei 430070, P. R. China
L. Zhao
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
F. Li
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
N.S. Zhang
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
X. J. Meng
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
L. Shen
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
C. Shen
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
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Abstract

In order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered with silicon dioxide (SiO2) by radio frequency magnetron sputtering. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that the device is a typical tunneling diode for minority carrier and a strong obstructing effect from majority carriers. The potential rectifying behavior and photovoltaic characteristic is present at dark current and weak light illumination, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

1. Wenas, W. W. and Riyadi, S., Solar Energy Materials and Solar Cells 90, 3261 (2006)Google Scholar
2. Song, D., Aberle, A.G. and Xia, J., Applied Surface Science 195, 291 (2002)Google Scholar
3. Lee, J., Lee, D., Lim, D. and Yang, K., Thin Solid Films 515, 6094 (2007)Google Scholar
4. Selmi, M., Chaabouni, F., Abaab, M. and Rezig, B., Superlattices and Microstructures 44, 268 (2008)Google Scholar
5. Chen, X. D., Ling, C. C., Fung, S. and Beling, C. D., Applied Physics Letters 88, 132104 (2006)Google Scholar
6. Mridha, S., Dutta, M. and Basak, D., Journal of Materials Science: Materials in Electronics 1573–482X (Online) (2008)Google Scholar
7. Mridha, S. and Basak, D., Journal of Applied Physics 101, 083102 (2007)Google Scholar
8. Lee, J.Y., Choi, Y.S., Kim, J.H., Park, M.O. and Im, S., Thin Solid Films 403–404, 553 (2002)Google Scholar