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The β-FeSi2 Formation and Thermoelectric Power of the FeSi2+Co Base Alloys

Published online by Cambridge University Press:  21 March 2011

Yoshisato Kimura
Affiliation:
Tokyo Institute of Technology, Dept. of Materials Science and Engineering, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Kentaro Shindo
Affiliation:
Tokyo Institute of Technology, Dept. of Materials Science and Engineering, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Yoshinao Mishima
Affiliation:
Tokyo Institute of Technology, Dept. of Materials Science and Engineering, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
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Abstract

Temperature dependence of thermoelectric power and resistivity was measured for the β-FeSi2 based cast alloys on which n-type Co doping was performed with or without Cu addition. The Cu-free alloy shows a homogeneous eutectic microstructure consisting of metallic phases α-FeSi2 and ε-FeSi, while the Cu-doped alloy has a quite heterogeneous microstructure dominated by coarse ε-FeSi dendrites in the α-FeSi2 matrix. Adequate heat treatment condition for the semiconductor β-FeSi2 phase formation has been evaluated as annealing at 923 K for less than 50 h, which is lower in temperature and shorter in duration than previously reported for alloys prepared by powder metallurgy. The resistivity measurement with the aid of microstructure observation has revealed that the β-FeSi2 formation takes place and almost finishes at very early stage of annealing process. Addition of Cu effectively promotes the β-FeSi2 formation rate of the present cast alloys.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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Footnotes

*

Graduate Student, now with Mistubishi Heavy Industries, Ltd., 5–717–1 Fukahori-machi, Nagasaki 851–0392, Japan.

References

REFERENCES

1. Sakata, T. and Nishida, I., JIM, 15(1976)11.Google Scholar
2. Nishida, I., Phys. Rev., B7(1973)2710.Google Scholar
3. Ware, R. M. and McNeill, J. J., Proc. Inst. Electr. Eng., 111(1964)178.10.1049/piee.1964.0029Google Scholar
4. Birkholz, U. and Schelm, J., Phys. Stat. Sol., 27(1968)413.Google Scholar
5. Hesse, J., Z. Angew. Phys., 28(1969)133.Google Scholar
6. Sakata, T., Sakai, Y., Yoshida, H., Fujita, H. and Nishida, I., J. Less-Comm. Met., 61(1978)301.Google Scholar
7. Nishida, I., Okamoto, M., Ohkoshi, T. and Isoda, Y., Bull. of Natl. Res. Inst. for Metals JPN, 11(1990)145.Google Scholar
8. Isoda, Y., Ohkoshi, T., Nishida, I. and Kaifu, H., J. Mater. Sci. Soc. JPN, 25(1989)311.Google Scholar
9. Kojima, T., Okamoto, M. and Nishida, I., Proc. of the 5th ICTEC, 1984, 56.Google Scholar
10. Piton, J. P. and Fay, M. F., C. R. Acad. Sci., C266(1968)514.Google Scholar
11. Kuan, T. S., Freeouf, J. L., Batson, R. F. and Wilkie, E. L., J. Appl. Phys., 58(1985)1519.Google Scholar
12. Yamauchi, I., Ueyama, S. and Ohnaka, I., Mater. Sci. Eng., A208(1996)101.Google Scholar
13. Yamauchi, I., Ueyama, S. and Ohnaka, I., Mater. Sci. Eng., A208(1996)108.Google Scholar
14. Yamauchi, I., Suganuma, A., Okamoto, T. and Ohnaka, I., Mater. Sci., 32(1997)4603.Google Scholar