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Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation
Published online by Cambridge University Press: 25 February 2011
Abstract
A study on ion beam synthesis of buried α- and β-FeSi2 in >100< Si is presented. Phase formation has been investigated as a function of implant and anneal temperature. Layer characterization was performed by RBS, XRD, resistivity, spreading resistance and Hall effect measurements. Orientation effects in the layers have been observed depending on the implant temperature. Transport measurements show that die holes are the majority carriers in the semiconducting layers.
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- Copyright © Materials Research Society 1993
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