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Functionalization of Porous Silicon Surfaces through Hydrosilylation Reactions

Published online by Cambridge University Press:  09 August 2011

J. M. Buriak ,
M. P. Stewart  and
M. J. Allen
J. M. Buriak
Affiliation:
Department of Chemistry, Purdue University, West Lafayette, IN 47907-1393, buriak@purdue.edu
M. P. Stewart
Affiliation:
Department of Chemistry, Purdue University, West Lafayette, IN 47907-1393, buriak@purdue.edu
M. J. Allen
Affiliation:
Department of Chemistry, Purdue University, West Lafayette, IN 47907-1393, buriak@purdue.edu
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Abstract

Hydrosilylation of alkynes and alkenes on silicon surfaces utilizing the native Si-H termination can be smoothly and rapidly carried out (30 s to 24 h) at room temperature through hydrosilylation mediated by Lewis acid catalysts or photoinduction with white light. Insertion of alkynes and alkenes into surface silicon hydride bonds yields covalently bound alkenyl and alkyl groups, respectively. Different chemical functionalities can be incorporated through these hydrosilylation reactions, including ester, hydroxy, chloro, nitrile and chiral groups. Hydrophobic porous silicon surfaces demonstrate remarkable stability with respect to boiling aqueous aerated pH 1 to 10 solutions, and protect the bulk silicon from attack. Modification and tailoring of surface properties through this series of reactions induce wide variations in photoluminescent behavior of porous silicon, leading to almost complete quenching in the case of substituted and unsubstituted styrenyl termination, and minor decreases for alkyl and alkenyl functionalization. Because of the broad range of stable, modified surfaces produced using this chemistry, the work described here represents an important step towards technological applications of silicon surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 173
Copyright
Copyright © Materials Research Society 1999

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References

1. Cullis, A.G., Canham, L.T., Calcott, P.D.J., J. Appl. Phys. 82, 909 (1997).Google Scholar
2. Sailor, M.J., Lee, E.J., Adv. Mater. 9, 783 (1997).Google Scholar
3. Buriak, J.M., Advanced Materials (in press).Google Scholar
4. Lee, E.J., Bitner, E. T.W., Ha, J.S., Shane, M.J., Sailor, M.J., J. Am. Chem. Soc. 118, 1390 (1996).Google Scholar
5. Cotton, F.A., Wilkinson, G., Advanced Inorganic Chemistry, 5th ed. (John Wiley and Sons, New York, 1988), pp. 1255–1256.Google Scholar
6. Buriak, J.M., Allen, M.A., J. Am. Chem. Soc., 120, 1339 (1998).Google Scholar
7. Holland, J.M., Stewart, M.P., Allen, M.J., Buriak, J.M., J. Solid State Chem. (submitted).Google Scholar
8. Stewart, M.P., Buriak, J.M., Angew. Chem. Int. Ed. Engl. (in press).Google Scholar
9. On (111) Si-H: Linford, M.R., Fenter, P., Eisenberger, P.M., Chidsey, C.E.D., J. Am. Chem. Soc. 117, 3145 (1995).Google Scholar
10. On (100) Si-H: Sieval, A.B., Demirel, A.L., Nissink, J.W.M., Linford, M.R., van der Maas, J.H. Jeu, W.H. de, Zuilhof, H., E.J.R. Sudhölter, Langmuir, 14, 1759 (1998).Google Scholar
11. Bateman, J.E., Eagling, R.D., Worrall, D.R., Horrocks, B.R., Houlton, A., Angew. Chem. Int. Ed. Engl. 37, 2683 (1998).Google Scholar
12. Cationic Polymerization, volume 665, edited by Faust, R. and Shaffer, T. D. (American Chemical Society, Washington DC, 1997).Google Scholar
13. Song, J. H., Sailor, M. J., J. Am. Chem. Soc. 120, 2376 (1998).Google Scholar
14. Kim, N. Y., Laibinis, P. E., J. Am. Chem. Soc. 120, 4516 (1998).Google Scholar