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GaN HEMT Drain-Lag Performance Dependence on GaN Channel Quality

Published online by Cambridge University Press:  11 February 2015

Yoichi Kamada ,
Naoya Okamoto ,
Masaru Sato ,
Atsushi Yamada ,
Junji Kotani ,
Tetsuro Ishiguro ,
Toshihiro Ohki ,
Shirou Ozaki ,
Kozo Makiyama  and
Keiji Watanabe
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Yoichi Kamada
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Naoya Okamoto
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Masaru Sato
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Atsushi Yamada
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Junji Kotani
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Tetsuro Ishiguro
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Toshihiro Ohki
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Shirou Ozaki
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Kozo Makiyama
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Keiji Watanabe
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
Kazukiyo Joshin
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Abstract

In this study, we investigated GaN channel layer quality to suppress drain-lag, which is an important parameter for switching performance. In this experiment, we confirmed that drain-lag performance has dependence on the tilt of the GaN channel layer. GaN channel layer with the tilt angle of 243 arcsec showed faster drain-lag recovery than the tilt angle of 209 arcsec. The results of the drain-lag test and isolation leakage current measurement indicated that the tilt angle and hopping distance contributed to drain-lag recovery. We proposed the mechanism of trap effect during the drain-lag test.

Keywords

III-Vx-ray diffraction (XRD)dislocations
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t01-05
Copyright
Copyright © Materials Research Society 2015 

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References

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