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Grain Growth Behavior During Microwave Annealing of Silicon Nitride
Published online by Cambridge University Press: 10 February 2011
Abstract
A comparative study of grain growth behavior in silicon nitride under conventional and microwave annealing is presented. Microwave annealed specimens showed a faster growth rate as indicated by the quantitative microstructural analysis. The phenomenon was used in combination with seeding techniques to develop a silicon nitride exhibiting a bi-modal microstructure. Microwave annealing was carried out using a microwave radiation frequency of 28 GHz.
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- Copyright © Materials Research Society 1996
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