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Growth and Characterization of BRS GaInAsp-GaAs Laser Emitting At 0.8μm by Gas-Source Molecular Beam Epitaxy
Published online by Cambridge University Press: 10 February 2011
Abstract
GaInAsP-GaAs buried ridge structure lasers emitting at 0.8μm have been fabricated on material grown in two steps by low pressure metalorganic chemical vapor deposition and gas-source molecular beam epitaxy. Preliminary laser results are reported, and the feasibility of using gas-source molecular beam epitaxy for the regrowth of sophisticated laser system is demonstrated.
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- Copyright © Materials Research Society 1996