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Growth and Characterization of CuInSe2 Epitaxial Films for Device Applications

Published online by Cambridge University Press:  10 February 2011

S. Niki ,
T. Kurafuji ,
P. J. Fons ,
I. Kim ,
O. Hellman  and
A. Yamada
S. Niki
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1- 1-4 Umezono, Tsukuba, Ibaraki 305, Japan (phone) 81-298-58-5610 (FAX) 81-298-58-5615, s.niki@etlrips.etl.go.jp
T. Kurafuji
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1- 1-4 Umezono, Tsukuba, Ibaraki 305, Japan (phone) 81-298-58-5610 (FAX) 81-298-58-5615, s.niki@etlrips.etl.go.jp
P. J. Fons
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1- 1-4 Umezono, Tsukuba, Ibaraki 305, Japan (phone) 81-298-58-5610 (FAX) 81-298-58-5615, s.niki@etlrips.etl.go.jp
I. Kim
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1- 1-4 Umezono, Tsukuba, Ibaraki 305, Japan (phone) 81-298-58-5610 (FAX) 81-298-58-5615, s.niki@etlrips.etl.go.jp
O. Hellman
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1- 1-4 Umezono, Tsukuba, Ibaraki 305, Japan (phone) 81-298-58-5610 (FAX) 81-298-58-5615, s.niki@etlrips.etl.go.jp
A. Yamada
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1- 1-4 Umezono, Tsukuba, Ibaraki 305, Japan (phone) 81-298-58-5610 (FAX) 81-298-58-5615, s.niki@etlrips.etl.go.jp
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Abstract

CuInSe2 (CIS) epitaxial layers have been grown on both GaAs (001) and In0.29Ga0.71 As pseudo lattice-matched substrates by molecular beam epitaxy, and characterized for device applications. Despite a large lattice mismatch of Δa/a˜2.2%, epitaxial growth of CuInSe2 has been demonstrated on GaAs (001) showing their film properties strongly dependent on the Cu/In ratio. In-rich films had a large number of twins on {112} planes, and were found to be heavily compensated. On the other hand, Cu-rich films showed distinct photoluminescence emissions indicating significantly higher film quality in comparison with In-rich films. Two dimensional reciprocal x-ray intensity area mapping and cross-sectional transmission electron microscopy showed the formation of an interfacial layer in the vicinity of the CuInSe2/GaAs interface resulting from the strain-induced interdiffusion between CuInSe2 and GaAs. Reduction in lattice mismatch to Δa/a˜0.2% by using In0.29Ga0.71As pseudo lattice-matched substrates made possible the growth of high quality CuInSe2 with predominant free exciton emissions in their photoluminescence spectra and with residual defect densities of as low as p˜l×1017cm-3 implying the growth of device quality CuInSe2 epitaxial films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 233
Copyright
Copyright © Materials Research Society 1996

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