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Growth and Characterization of Thermoelectric Mg2Si Thin Films
Published online by Cambridge University Press: 25 July 2011
Abstract
In this work, room temperature co-deposition of Mg and Si was used to successfully fabricate Mg2Si thin films on Si substrate by dual cathode magnetron sputtering (DCMS). Films were annealed at 380°C. Various Mg/Si sputtering power ratios have been examined. XRD, SEM and IR reflectivity measurements on grown and annealed films, reveal that annealing is enhancing the formation of crystalline Mg2Si.
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- Copyright © Materials Research Society 2011
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