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Growth of Oriented Gallium Nitride Films on Amorphous Substrates by Self Assembly

Published online by Cambridge University Press:  11 February 2011

Hongwei Li  and
Mahendra K. Sunkara
Hongwei Li
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, U.S.A.
Mahendra K. Sunkara
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, U.S.A.
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Abstract

C-plane oriented thin films of gallium nitride (GaN) were grown on both amorphous quartz substrates and single crystalline c-sapphire substrates at sub-atmospheric pressures by exposing molten gallium thin films to electron cyclotron resonance (ECR) microwave generated nitrogen plasma. Gallium nitride crystals nucleated from molten gallium and self-aligned with respect to each other due to the mobility of nitrogenated gallium and formed textured film directly on amorphous substrates. Scanning electron microscopy (SEM) images and X-ray Diffraction (XRD) spectra confirmed the orientation among crystals. Micro-Raman spectra exhibited a FWHM of 3 cm−1. Self-assembled, nanocrystalline GaN thin films were obtained when spin-coated gallium thin films (< 1 μm) on quartz substrates were nitrided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.11
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Nakamura, S., Senoh, M, Mukai, T., Appl. Phys. Lett. 62, 2390 (1993)Google Scholar
[2] Morkoc, H., Mohammad, S. N., Science 267, 51(1995)Google Scholar
[3] Nakamura, S., Mat. Sci. Eng. B-Solid 43, 258(1997)Google Scholar
[4] Ponce, F.A., Bour, D. P., Nature 386, 351 (1997)Google Scholar
[5] Khan, M.A., Shur, M.S., Mat. Sci. Eng. B-Solid 46, 69(1997)Google Scholar
[6] Lee, C. R., Lee, I. -H., et al., J. Cryst. Growth, 182, 11(1997)Google Scholar
[7] Park, C. I., Lim, K. Y., et al., Thin Solid Films 401, 60 (2001)Google Scholar
[8] Xie, M.H., Tong, S.Y., et al., Phy. Rev. Letters, 82, 2749, (1999)Google Scholar
[9] Kim, E., Bensaoula, A., et al., J. Cryst. Growth, 243, 456(2002)Google Scholar
[10] Nikitina, I.P., Nikolaev, A.E., Melnik, Y.V., Diam. Relat. Mat., 6, 1532(1997)Google Scholar
[11] Motoki, K., Okahisa, T., kimura, H., Kimagai, Y., Seki, H., J. Cryst. Growth, 237–239, 912, (2002)Google Scholar
[12] Porowski, S., Grzegoty, I., J. Cryst. Growth, 178, 174(1997)Google Scholar
[13] Liu, L. and Edgar, J. H., Mat. Sci. Eng. R, 37, 61, (2002)Google Scholar
[14] Zheleva, T. S., Nam, O., Ashmawi, W. M., Griffin, J. D., Davis, R F., J. Cryst. Growth, 222, 706(2001)Google Scholar
[15] Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., Mehregany, M., J. Cryst. Growth, 225, 134(2001)Google Scholar
[16] Zauner, A.R.A., Aret, E., van Enckevort, W.J.P., Weyher, J.L., Porowski, S., Schermer, J.J., J. Cryst. Growth, 240, 14(2002)Google Scholar
[17] Porowski, S., J. Cryst. Growth, 166, 583(1996)Google Scholar
[18] Dyck, J.S., Angus, J.C., et al., Appl. Phys. Lett., 70, 179(1997)Google Scholar
[19] Angus, J.C., et al., MRS Internet J Nitride research, 4S1, G3.23 (1999)Google Scholar
[20] Madar, R., Jacob, G., hallais, J., Fruchart, R., J. Cryst. Growth, 31, 197(1975)Google Scholar
[21] Elwell, D., Feigelson, R.S., Simkins, M.M., Tiller, W.A., J. Cryst. Growth, 66, 45(1984)Google Scholar
[22] Chandrasekaran, H., Sunkara, M. K. in GaN and Related Alloys, edited by Northrup, J. E., Neugebauer, J., Look, D. C., Chichibu, S. F., Riechert, H., (MRS Symp. Proc., 693, Boston, MA, 2001) pp. 159–164 Google Scholar
[23] Balkas, C.M., Sitar, Z., et.al, J. Cryst. Growth, 208, 100(2000)Google Scholar