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Heteroepitaxial Growth of InP on GaAs with Interface Layer Grown by Flow-Rate Modulation Epitaxy
Published online by Cambridge University Press: 28 February 2011
Abstract
We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full-widths-at-half-maximum of the x-ray rocking curve and the 10-K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.
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- Copyright © Materials Research Society 1990