Article contents
Heteroepitaxial Growth of Si ON ZrO2-Y2O3/Si
Published online by Cambridge University Press: 25 February 2011
Abstract
Silicon films were grown on epitaxial (ZrO2)1-x(Y2O3). films on the Si substrate. The deposition of Si was carried out by conventional plasma-CVD of the mixture of SiH4, H2 and PH3 gases. The appropriate deposition conditions for the epitaxial growth of Si were examined. The crystallographic properties of the Si films were characterized by reflection high-energy electron diffraction (RHEED).
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1991
References
REFERENCES
- 1
- Cited by