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Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates
Published online by Cambridge University Press: 17 March 2011
Abstract
We have developed a new method to prepare low-dislocation-density GaN by using periodically grooved substrates in a conventional MOVPE growth technique. This new approach was demonstrated for GaN grown on periodically grooved α-Al2O3(0001), 6H-SiC(0001)Si and Si(111) substrates. Dislocation densities were 2×107 cm−2 in low-dislocation-density area.
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- Copyright © Materials Research Society 2001
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