No CrossRef data available.
Article contents
High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System
Published online by Cambridge University Press: 26 February 2011
Abstract
We report the the first demonstration of optically bistable switching in monolithic opto-electronic transistor configuration using all III-V components. A strained InGaAs/GaAs asymmetric Fabry-Perot (ASFP) modulator / detector, a strained resonant tunneling diode (RTD), and a GaAs based field-effect-transistor (FET) were used in this demonstration.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992