Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-18T01:16:35.365Z Has data issue: false hasContentIssue false
  • English
  • Français

High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser

Published online by Cambridge University Press:  31 January 2011

Alessandro Baiano ,
Ryoichi Ishihara  and
Kees Beenakker
Alessandro Baiano
Affiliation:
a.baiano@tudelft.nl, TU Delft, DIMES - ECTM, Delft, Netherlands
Ryoichi Ishihara
Affiliation:
r.ishihara@tudelft.nl, TU Delft, DIMES - ECTM, Delft, Netherlands
Kees Beenakker
Affiliation:
beenakker@dimes.tudelft.nl, TU Delft, DIMES - ECTM, Delft, Netherlands
Get access

Abstract

In this paper we investigate the carriers mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors (SG-TFTs) by μ-Czochralski process at low-temperature process (< 350 °C). The high laser energy density nearby the ablation phenomenon that completely melts the silicon layer during the crystallization is responsible for high tensile strain and good crystal quality of the silicon grains, which lead carriers mobility enhancement.

Keywords

laser ablationzone meltingthermal stresses
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A12-01
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Reuss, R.H. Chalamala, B.R. Moussessian, A. Kane, M.G. A.Kumar, Zhang, D.C. Rogers, J.A. Hatalis, M. Temple, D. Moddel, G. Eliasson, B.J. Estes, M.J. unze, J. K., Handy, E.S. Harmon, E.S. Salzman, D.B. Woodall, J.M. Alam, M.A. Murthy, J.Y. Jacobsen, S.C. Oliver, M. Markus, D. Campbell, P.M. and Snow, E. “Macroelectronics:Perspectives on Technology and Applications”, Proceeding of the IEEE, vol. 93, no. 7, July 2005.Google Scholar
2 Matsumoto, T. Satoh, M. Sakuma, K. Kurino, H. Miyakawa, N. Itani, H. and Koyanagi, M. “New three-dimensional wafer bonding technology using the adhesive injection method”, Japanese Journal of Applied Physics Part 1-Regular Papers 37 (1998)Google Scholar
3 Mofrad, M.R.T. Ishihara, R. Derakhshandeh, J. Baiano, A. Cingel, J. v.d., Beenakker, C. “Monolithic 3D Integration of Single-Grain Si TFTs”, Proceeding of MRS, vol. 1066, 2008.Google Scholar
4 Sposili, R.S. and Im, J.S. “Sequential lateral solidification of thin silicon films on SiO SiO2 ”, Appl. Phys. Lett., vol. 69, no. 19, pp. 2864, 1996.Google Scholar
5 Hara, A. Takeuchi, F. Takei, M. Suga, K. Yoshino, K. Chida, M. Sano, Y. and and Sasaki, N. “High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization”, Jpn. Journal of Appl. Phys. vol. 41, pp. L311, 2002.Google Scholar
6 Hatano, M. Shiba, T. and Okumura, M., “Selectively enlarging laser crystallization technology for high and uniform performance poly-Si TFTs”, SID Int. Symp. Dig. Tech. Papers, vol. 33, pp. 158, 2002.Google Scholar
7 Oh, C.H. Ozawa, M. and Matsumura, M. “A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films”, Jpn. Journal Appl. Phys, vol. 37, pp. L492, 1998.Google Scholar
8 Ishihara, R. Wilt, P. v.d. Dijk, B. D. van, Burtsev, A. Voogt, F. C. Bertens, G. J. Metselaar, J. W. and Beenakker, C. I. M. “Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass”, Flat Panel Display Technology and Display Metrology II (Edward, T. V. Kelley, F. ed.), vol. 4295 of Proc. SPIE, pp. 14–23, 2001.Google Scholar
9 Chen, T. Ishihara, R. Baiano, A. Beenakker, C.I.M., “Highly Uniform Single-Grain Si TFTs Inside (110) Orientated Large Si Grains Grains” the 15th International Display Workshop 2008, AMD5-4L.Google Scholar
10 Baiano, A. Danesh, M. Saputra, N. Ishihara, R. Long, J. Metselaar, W. Beenakker, C.I.M. Karaki, N. Hiroshima, Y. and Inoue, S. “Single-grain Si thin-film transistors SPICE model, analog and RF circuit applications”, Solid-State Electronics, vol. 52, no. 9, pp. 1345–1352, 2008 Google Scholar
11 Welser, J. Hoyt, J. L. Gibbons, J. F. “Electron Mobility Enhancement in Strained-Si N-Type Metal-Oxide-Semiconductor Field-Effect Transistors”, IEEE Electron Device Letters, vol. 15, March 1994.Google Scholar
12 Welser, J. Hoyt, J. L. Takagi, S. Gibbons, J. F. “Strain Dependence of the Performance Enhancement in Strained-Si n-MOSFETs”, Inter. Electron Devices Meeting 1994.Google Scholar
13 Mizuno, T. Takagi, S. Sugiyama, N. Satake, H. Kurobe, A. Toriumi, A. “Electron and Hole Mobility Enhancement in Strained-Si MOSFET's on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology”, IEEE Electron Device Letters, vol. 21, May 2000.Google Scholar
14 Tsunoda, I. Matsuura, R. Tanaka, M. Watakabe, H. Sameshima, T. Miyao, M. “Direct Formation of Strained Si on Insulator by Laser Annealing”, Thin Solid Films, vol 508, pp. 96–98, 2006.Google Scholar
15 Lengsfeld, P. Nickel, N.H. Genzel, Ch., Fuhs, W. “Stress in Undoped and Doped Laser Crystallized Poly-Si”, Journal of Applied Physics, vol. 91, no. 11, June 2002.Google Scholar
16 Cho, H. S. Xianyu, W. Zhang, X. Yin, H. Noguchi, T. “Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seed and Laser-Induced Lateral Crystallization”, Japanese Journal of Applied Physics, vol. 45, no. 10A, 2006, pp. 7682–7684.Google Scholar
17 Ishihara, R. Danciu, D. Tichelaar, F. He, M. Hiroshima, Y. Inoue, S. Shimoda, T. Metselaar, J.W. Beenakker, C.I.M. “Microstructure characterization of location-controlled Si-islands by excimer laser in the ì-Czochralski (grain filter) process”, Journal of Crystal Growth, vol. 299, 2007, pp. 316–321.Google Scholar
18 Vikas, R. Ishihara, R. Hiroshima, Y. Abe, D. Inoue, S. Shimoda, T. Metselaar, J.W. and Beenakker, C.I.M. “High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by ì-Czochralski Process with Capping Layer”, Inter. Electron Devices Meeting 2005.Google Scholar
19 Ishihara, R. Tao, C. He, M. Deosarran, P. Andel, Y. van, Metselaar, J. W. and Beenakker, C. I. M. “Low-Temperature Deposition of High Quality SiO SiO2 by Inductively Coupled Plasma Enhanced CVD” to be published in Thin Solid Films.Google Scholar
20 Rana, V. Ishihara, R. Hiroshima, Y. Abe, D. Inoue, S. Shimoda, T. Metselaar, J.W. and Beenakker, C.I.M. “Dependence of Single-Crystalline Si Thin-Film Transistor Characteristics on the Channel Position inside a Location-Controlled Grain”, IEEE Transactions on Electron Devices, vol.52, no.12, Dec. 2005.Google Scholar
21 Scheoder, D. K. “Semiconductor Material and Device Characterization third edition”, A Wiley-Interscience Publication.Google Scholar
22 Rana, V. “Single Grain Si TFT and Circuits based on the ì-Czochralski process”, Ph.D. Thesis.Google Scholar
23 Rana, V. Ishihara, R. Hiroshima, Y. Abe, D. Higashi, S. Inoue, S. Shimada, T. Metselaar, J. W. and Beenakker, C.I.M. “High performance p-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ì-Czochralski process”, IEICE Trans. Electron., vol. E87-C, no.11, pp. 1943–1947, Nov. 2004.Google Scholar
24 Takagi, S. Hoyt, J.L. Welser, J.J. and Gibbons, J.F. “Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field effect transistors”, J. Appl. Phys. 80, 1567 (1996).Google Scholar
25 Oberhuber, R. Zandler, G. and Vogl, P. “Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET's”, Physical review B, vol. 58, no. 15, Oct. 1998.Google Scholar
26 Matzuki, N. Ishihara, R. Baiano, A. Hiroshima, Y. Inoue, S. and Beenakker, C.I.M, “Local Electrical Property of Coincidence Site Lattice Boundary in Location-Controlled Silicon Islands by Scanning Spread Resistance Microscope”, Proceeding of The 14th International Display Workshops, vol.2, pp. 489–492, 2007.Google Scholar
27 Fischetti, M.V. and Laux, S.E. “Band Stucture, Deformation Potential, and Carrier Mobility in Strained Si, Ge, and SiGe alloys”, Journal of Appl. Phys 80, pp. 2234–2252, Aug. 1996.Google Scholar
28Sentaurus TCAD manual.Google Scholar
29 Baiano, A. Tan, J. Ishihara, R. and Beenakker, K. “Reliability Analysis of Single Grain Si TFT using 2D Simulation”, Electrochemical Society Transactions, vol. 16, pp. 109–114, 2008.Google Scholar