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High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

Published online by Cambridge University Press:  17 February 2014

Andrzej Taube ,
Maciej Kozubal ,
Jakub Kaczmarski ,
Marcin Juchniewicz ,
Adam Barcz ,
Jan Dyczewski ,
Rafał Jakieła ,
Elżbieta Dynowska ,
Michał Adam Borysiewicz  and
Paweł Prystawko
...Show all authors
Andrzej Taube
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Maciej Kozubal
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Jakub Kaczmarski
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Marcin Juchniewicz
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Adam Barcz
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland
Jan Dyczewski
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland
Rafał Jakieła
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland
Elżbieta Dynowska
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland
Michał Adam Borysiewicz
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Paweł Prystawko
Affiliation:
Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland. TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland
Jakub Jasiński
Affiliation:
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Paweł Borowicz
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224Warsaw, Poland
Eliana Kamińska
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Anna Piotrowska
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
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Abstract

The paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

Keywords

ion-implantationIII-VN
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 9 - 14
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Mishra, U. K., Parikh, P., Wu, Y.F., Proc. IEEE 90(6), 1022–1031 (2002)CrossRefGoogle Scholar
Bahl, S. R., Leary, M. H., del Alamo, J. A., IEEE Electron Device Lett., 13(4), 2037–2043 (1992)CrossRefGoogle Scholar
Sun, M., Lee, H.S, Lu, B, Piedra, D., Palacios, T., Appl.Phys. Exp. 5 074202 (2012)CrossRefGoogle Scholar
Ziegler, J. F., Ziegler, M.D., Biersack, J.P., Nucl. Instr. Meth. B 268(11-12), 1818–1823 (2010)CrossRefGoogle Scholar
Liu, C., Mensching, B., Volz, K., Rauschenbach, B., Appl. Phys. Lett., 71, 2313 (1997)CrossRefGoogle Scholar
Oishi, T., Miura, N., Suita, M., Nanjo, T.a, Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. Jimbo, T., J. Appl. Phys. 94, 1662 (2003)CrossRefGoogle Scholar
Kucheyev, S.O., Williams, J.S., Pearton, J.S., Mater. Sci. Eng. R-Rep. 33(2), 51–108 (2001)CrossRefGoogle Scholar
Katsikini, M., Papagelis, K., Paloura, E. C., Ves, S., J. Appl. Phys. 94, 4389 (2003)CrossRefGoogle Scholar
Roul, B., Rajpalke, M. K., Bhat, T. N., Kumar, M., Kalghatgi, A. T., Krupanidhi, S. B., Kumar, N., Sundaresan, A., Appl. Phys. Lett. 99, 162512 (2011)CrossRefGoogle Scholar
Pearton, S. J., Mater. Sci. Rep. 4, 313–367 (1990)CrossRefGoogle Scholar
Shiu, J.Y., Huang, J.C., Descmaris, V., Chang, C.T., Lu, C.Y., Kamakura, K., Makimoto, T., Zirath, H., Rorsman, N., Chang, E.Y., IEEE Electron Device Lett., 28(6), 476–478 (2007)CrossRefGoogle Scholar
Kato, Y., Shimada, T., Shiraki, Y. Komatsubara, K. F., J. Appl. Phys. 45, 1044 (1974)CrossRefGoogle Scholar
Mott, N.F., Phil. Mag. 19(160), 835–852 (1969)CrossRefGoogle Scholar