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A High Speed Contact-Type Image Sensor using Amorphous Silicon Alloy Pin Diodes

Published online by Cambridge University Press:  21 February 2011

K. Kitamura ,
H. Mimura ,
K. Tsukada ,
T. Nakayama ,
M. Yamaguchi  and
Y. Tawada
K. Kitamura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5–10–1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
H. Mimura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5–10–1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
K. Tsukada
Affiliation:
Electronic & Information Systems Divisions Group, Nippon Steel Corporation, 5–10–1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
T. Nakayama
Affiliation:
Electronic Materials Research Laboratories, Kaneka Corporation, 2–1–1 Hieitsuji, Ohtsu, Shiga 520–01, Japan
M. Yamaguchi
Affiliation:
Central Research Laboratories, Kaneka Corporation, 1–2–80 Yoshida-cho, Kobe, Hyogo 652, Japan
Y. Tawada
Affiliation:
Central Research Laboratories, Kaneka Corporation, 1–2–80 Yoshida-cho, Kobe, Hyogo 652, Japan
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Abstract

A new A4-size contact-type image sensor with 8 elements per millimeter (1,728 elements) was developed by using amorphous silicon alloy pin photodiodes as the light receiving elements. The matrix switching method is employed for signal reading. This method can read the signals from all of the 1,728 photodiodes using a 54 (54-channel input) x 32 (32.channel output) matrix switching scheme. It is advantageous in that the required input and output external circuits can be simplified. To prevent signal crosstalk between the diodes in the matrix, amorphous silicon alloy pin diodes, which are made in the same process as the photodiodes for maintaining a low cost, are connected in series to each photodiode in reverse polarity as blocking diodes.

To achieve superior signal-to-noise ratio and response at the same time, amorphous silicon alloy pin diodes are optimized to satisfy both a high photo-to-dark ratio and a high rectification ratio. The image sensor can operate at up to 2 MHz signal reading clock, maintaining a signal-to-noise ratio of over 24 dB under 0. 1–1x sec exposure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1115
Copyright
Copyright © Materials Research Society 1992

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References

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