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High-Dose Titanium Ion Implantation into Epitaxial Si/3C-SiC/Si Layer Systems for Electrical Contact Formation

Published online by Cambridge University Press:  15 March 2011

Jörg K.N. Lindner ,
Stephanie Wenzel  and
Bernd Stritzker
Jörg K.N. Lindner
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
Stephanie Wenzel
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
Bernd Stritzker
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
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Abstract

High-dose titanium implantations have been performed into ion beam synthesized heteroepitaxial layer systems of Si/3C-SiC/Si(100) in order to study the formation of titanium silicide layers in the silicon top layer. The structure and composition of layers was analysed using RBS, XRD, XTEM and EFTEM. The sputtering rates of 180 keV Ti ions were determined using the lower SiC/Si interface as a marker. A homogeneous surface layer with the stoichiometry of TiSi2 was formed by a nearly stoichiometric implantation and subsequent annealing. The formation of more metal-rich silicides was observed at doses where the peak Ti concentration largely exceeds the TiSi2 stoichiometry and where the total amount of Ti atoms in the top layer is greater than the amount needed to convert the entire Si top layer into TiSi2. Under these conditions, strong solid state reactions of the implanted Ti atoms with the buried SiC layer and the silicon substrate are observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T8.4.1
Copyright
Copyright © Materials Research Society 2000

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References

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