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High-Energy Low-Dose Implanted Silicon Annealed by Transient RTA

Published online by Cambridge University Press:  26 February 2011

IstvÁn BÁrsony ,
Jean-Luc Heideman ,
Jan Middelhoek  and
Hans Wallinga
IstvÁn BÁrsony
Affiliation:
On leave from the Technical University of Budapest, Hungary
Jean-Luc Heideman
Affiliation:
IC-technology and Electronics Group, University of Twente P.O.Box 217, 7500AE Enschede, The Netherlands
Jan Middelhoek
Affiliation:
IC-technology and Electronics Group, University of Twente P.O.Box 217, 7500AE Enschede, The Netherlands
Hans Wallinga
Affiliation:
IC-technology and Electronics Group, University of Twente P.O.Box 217, 7500AE Enschede, The Netherlands
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Abstract

Transient RTA performed in the sub-second time range has been applied for low-thermal-budget post-implantation anneal of low-dose, high-energy P and B implanted wafers. This very rapid thermal step not only accomplished full activation and minimum profile motion but was also effective in reducing the resident damage-associated lifetime problems compared to conventional annealing. The generation lifetime and velocity depth-profiling used for process characterization shed light on the role of metallic impurities in the high-energy B and P implanted samples during the fast-quenching operations in determining the electrical behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 277
Copyright
Copyright © Materials Research Society 1991

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