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High-Resolution Electron Microscopy Observations of Grain-Boundary Films in Silicon Nitride Ceramics

Published online by Cambridge University Press:  25 February 2011

H.-J. Kleebe ,
M. K. Cinibulk ,
I. Tanaka ,
J. Bruley ,
R. M. Cannon ,
D. R. Clarke ,
M. J. Hoffmann  and
M. Rühle
H.-J. Kleebe
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, D-7000 Stuttgart 1, Germany
M. K. Cinibulk
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, D-7000 Stuttgart 1, Germany
I. Tanaka
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, D-7000 Stuttgart 1, Germany
J. Bruley
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, D-7000 Stuttgart 1, Germany
R. M. Cannon
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, D-7000 Stuttgart 1, Germany
D. R. Clarke
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, D-7000 Stuttgart 1, Germany
M. J. Hoffmann
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, D-7000 Stuttgart 1, Germany
M. Rühle
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, D-7000 Stuttgart 1, Germany
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Abstract

Characterization of silicon nitride ceramics by transmission electron microscopy (TEM) provides structural and compositional information on intergranular phases necessary to elucidate the factors that can influence the presence and thickness of grain-boundary films. Different TEM techniques can be used for the detection and determination of intergranular-film thickness, however, the most accurate results are obtained by high-resolution electron microscopy (HREM). HREM studies were applied, in conjunction with analytical electron microscopy, to investigate the correlation between intergranular-phase composition and film thickness. Statistical analyses of a number of grain-boundary films provided experimental verification of a theoretical equilibrium film thickness. Model experiments on a high-purity Si3N4 material, doped with low amounts of Ca, suggest the presence of two repulsive forces, a steric force and a force produced by an electrical double layer, that may act to balance the attractive van der Waals force necessary to establish an equilibrium film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 287: Symposium K – Silicon Nitride Ceramics–Scientific and Technological Advances , 1992 , 65
Copyright
Copyright © Materials Research Society 1993

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References

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