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High-speed high-quality epitaxial growth of N and B codoped 6H-SiC by closed sublimation method

Published online by Cambridge University Press:  01 February 2011

Tomohiko Maeda
Affiliation:
m0534029@ccmailg.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, N/A, 468-8502, Japan, +81-52-832-1151, +81-52-832-1298
Yoshihiro Nakamura
Affiliation:
m0434029@ccmailg.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, Japan
Motoaki Iwaya
Affiliation:
iwaya@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, Japan
Satoshi Kamiyama
Affiliation:
skami@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, Japan
Hiroshi Amano
Affiliation:
amano@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, Japan
Isamu Akasaki
Affiliation:
akasaki@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, Japan
Tomoaki Furusho
Affiliation:
furusho@sixon.com, SiXON Ltd., Japan
Hiroyuki Kinoshita
Affiliation:
kinoshita@sixon.com, SiXON Ltd., Japan
Masahiro Yoshimoto
Affiliation:
yoshimot@dj.kit.ac.jp, Kyoto Institute of Technology, Japan
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Abstract

N and B codoped 6H-SiC epilayers were grown by the closed sublimation method, the growth rate of which was as high as 100 mm/h. Donor acceptor (DA) pair emission at different temperatures was investigated for two samples with different B concentrations. The integrated photon count obtained from the photoluminescence (PL) spectra of the sample having high B concentration increases with temperature. To estimate the internal quantum efficiency, we measured the PL integrated photon counts of GaN at 10 K as a reference. The integrated PL photon count of 6H-SiC DA-doped epilayer at 250 K is almost comparable to that of GaN at 10 K, which is thought to be almost 100% because of the freezing of the nonradiative recombination at low temperature. This result implies that the internal quantum efficiency of the 6H-SiC DA-doped epilayer exceeds 95%.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

[1] Narukawa, Y., Niki, I., Izuno, K., Yamada, M., Murazaki, Y. and Mukai, T., Jpn. J. Appl. Phys., 41, (2002) L371.Google Scholar
[2] Ikeda, M., Hayakawa, T., Yamagiwa, S., Matsunami, H. and Tanaka, T., J. Appl. Phys., 50, (1979) 8215.Google Scholar
[3] Matsunami, H., Ikeda, M., Suzuki, A. and Tanaka, T., IEEE Trans. Electron Devices, ED-24, (1977) 958.Google Scholar
[4] Yoshida, T., Nishio, Y., Lilov, S. K. and Nishino, S., Mater. Sci. Forum 264–268 (1998) 155.Google Scholar
[5] Yoshikawa, T., Nishino, S. and Saraie, J., Inst. Phys. Conf. Ser. 142 (1996) 57.Google Scholar
[6] Furusho, T., Lilov, S. K., Ohshima, S. and Nishino, S., Jpn. J. Appl. Phys. 40 (2001) 6737.Google Scholar
[7] Im, J. S., Moritz, A., Steuber, F., Harle, V., Scholz, F. and Hangleiter, A., Appl. Phys. Lett., 70, (1997) 631.Google Scholar
[8] Kamiyama, S., Maeda, T., Nakamura, Y., Iwaya, M., Amano, H., Akasaki, I., Kinoshita, H., Furusho, T., Yoshimoto, M., Kimoto, T., Suda, J., Henry, A., Ivanov, I. G., Bergman, J. P., Monemar, B., Onuma, T. and Chichibu, S. F., to be published in J. Appl. Phys.Google Scholar