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Hole properties of a-Si:H and a-Si,Ge:H,F alloys
Published online by Cambridge University Press: 25 February 2011
Abstract
We present a study of the temperature and intensity dependence of the (μτ)p for Schottky barriers on an a-Si:H and a 1.3eV aSi,Ge:H,F alloy. Measured values for the activation energy of (μτ)p, , and the generation rate exponent of the (μτ)p, φ, show good agreement with calculated values. We also relate the (μτ)p with the mid-gap defect density, Na.
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- Copyright © Materials Research Society 1989
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