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Hydrogen Flip Model for Metastable Structural Changes in Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

R. Biswas  and
Y.-P. Li
R. Biswas
Affiliation:
Department of Physics and Astronomy, Microelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011
Y.-P. Li
Affiliation:
Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
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Abstract

We propose a new metastable defect associated with hydrogen atoms in amorphous silicon. A higher energy metastable state is formed when H is flipped to the backside of the Si-H bond at monohydride sites. This defect is described by a double-well potential energy and occurs in addition to metastable dangling bonds. The dipole moment of this “H-flip” defect is larger and increases the infrared absorption. This defect accounts for large structural changes observed on light soaking including larger absorption and volume dilation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 371
Copyright
Copyright © Materials Research Society 1999

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