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Identification of An Interstitial Carbon – Interstitial oxygen Complex in Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
The Si-G15 EPR spectrum and the 0.79eV “C-line” luminescence spectra in silicon are shown to arise from an interstitial carbon - interstitial oxygen complex. The g-tensor and 13C hyperfine interaction tensor indicate the structure in the vicinity of the carbon atom while stress alignment studies reveal the configuration near the oxygen atom. The pairing of the two impurities leads to a lattice relaxation which serves to stabilize the complex against dissociation.
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- Copyright © Materials Research Society 1988
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