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Identification of Surface-Related Electron Traps in Undoped GaAs by Deep Level Transient Spectroscopy
Published online by Cambridge University Press: 25 February 2011
Abstract
Using undoped GaAs containing grain boundary, we performed annealing test to identify the processes occurring during heat treatment. We propose EL2 as a complex of double vacancy, AsGa and Asi. From the concentration change at grain boundary region we temporarily conclude that EL3 is a simple intrinsic defect.
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- Copyright © Materials Research Society 1990