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Impact Ionization in Ion Implanted 4H-SiC Photodiodes

Published online by Cambridge University Press:  01 February 2011

Wei Sun Loh ,
Eric Z. J. Goh ,
Konstantin Vassilevski ,
Irina Nikitina ,
John P. R. David ,
Nick G Wright  and
C Mark Johnson
Wei Sun Loh
Affiliation:
w.s.loh@shef.ac.uk, the University of Sheffield, Electronic and Electrical Engineering, Mappin Street, S1 3JD, Sheffield, S1 3JD, United Kingdom, 01142225890
Eric Z. J. Goh
Affiliation:
ela04zjg@shef.ac.uk, the University of Sheffield, Electronic and Electrical Engineering, Mappin Street, Sheffield, S1 3JD, United Kingdom
Konstantin Vassilevski
Affiliation:
K.Vassilevski@ncl.ac.uk, Newcastle University, School of Electrical, Electronic and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Irina Nikitina
Affiliation:
I.Nikitina@ncl.ac.uk, Newcastle University, School of Electrical, Electronic and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
John P. R. David
Affiliation:
j.p.david@shef.ac.uk, the University of Sheffield, Electronic and Electrical Engineering, Mappin Street, Sheffield, S1 3JD, United Kingdom
Nick G Wright
Affiliation:
n.g.wright@ncl.ac.uk, Newcastle University, School of Electrical, Electronic and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
C Mark Johnson
Affiliation:
mark.johnson@nott.ac.uk, the University of Nottingham, School of Electrical and Electronic Engineering, University Park, Nottingham, NG7 2RD, United Kingdom
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Abstract

Hole dominated avalanche multiplication and thus breakdown characteristics of ion implanted 4H-SiC p+-n−-n+ photodiodes were determined by means of photomultiplication measurements using 325 nm UV light. All the tested diodes exhibited low reverse leakage current and reasonably uniform avalanche breakdown. With avalanche widths of 0.2 µm to 1.5 µm and the capability to measure multiplication factor as low as 1.001, the room temperature impact ionization coefficients were precisely deduced from these 4H-SiC diodes using a local ionization model for electric fields ranging from 1.25 MV/cm to 2.8 MV/cm. The results agree with those reported by Ng et al. and are within the accuracy of both the C-V measurements and electric-field determinations.

Keywords

ion-implantationelectrical propertiesU
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D07-12
Copyright
Copyright © Materials Research Society 2008

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References

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