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Impact of Dopants on the PbTe Thermoelectric Efficiency
Published online by Cambridge University Press: 01 February 2011
Abstract
We investigated the impact of doping group III elements (Al, Ga, In and Tl) on the electronic structure of PbTe by first principles calculations. The impurity-induced defect level changes with respect to the charge state of the impurity. We find that among the four elements, Tl is the best candidate for the enhancement of thermoelectric efficiency, consistent with the experimental data.
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- Copyright © Materials Research Society 2010