Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-10T20:40:18.107Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of Grain Size by Crystallization of Double-Layer Amorphous Silicon Films

Published online by Cambridge University Press:  15 February 2011

Dae Gyu Moon ,
Jeong No Lee ,
Ho Bin Im ,
Byung Tae Ahn ,
Kee Soo Nam  and
Sang Won Kang
Dae Gyu Moon
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-dong, Yusong-gu, Taejon, 305–701, Korea
Jeong No Lee
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-dong, Yusong-gu, Taejon, 305–701, Korea
Ho Bin Im
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-dong, Yusong-gu, Taejon, 305–701, Korea
Byung Tae Ahn
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-dong, Yusong-gu, Taejon, 305–701, Korea
Kee Soo Nam
Affiliation:
Electronics and Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Taejon, 305-606, Korea
Sang Won Kang
Affiliation:
Electronics and Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Taejon, 305-606, Korea
Get access

Abstract

We investigated the solid phase crystallization (SPC) behavior of 1000 Å amorphous Si (a- Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) at various temperatures and were able to enhance the grain size of the crystallized polysilicon films using double layers of a-Si filns. The deposition temperature of monolayer a-Si films varied from 200 to 400 °C and the films were recrystallized at 600 °C in nitrogen. As the deposition temperature increased, the incubation time was decreased and both the nucleation rate and growth rate were increased. Especially, the nucleation rate strongly depended on the deposition temperature.

Since the Si-SiO2 interface provides a large number of nucleation sites, it is desirable to suppress nucleation at the interface. As an idea we employed a structure with double layer a-Si films. The bottom a-Si layer deposited at lower temperature could suppress the nucleation at the Si-SiO2 interface while the top a-Si layer deposited at higher temperature could nucleate with a smaller number of nucleation sites. The incubation time and transformation behavior were determined by the deposition temperature of the top layer. As an example, the grain size of the double layer film deposited sequentially at 150 °C and 200 °C enhanced to 1.8 μm while that of the monolayer film deposited at 200 °C was 1.4 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 111
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Serikawa, T., Shirai, S., Okamoto, A., Suyama, S., Jpn. J. Appl. Phys. 28, L1871 (1989).Google Scholar
2. Bonnel, M., Duhamel, N., Henrion, T., Loisel, B., J. Electrochem. Soc. 140, 3484 (1993)Google Scholar
3. Nakazawa, K., J. Appl. Phys. 69, 1703 (1991).Google Scholar
4. Hatalis, M. K. and Greve, D. W., I. Appl. Phys. 63, 2260 (1988).Google Scholar
5. Takenaka, S., Kunii, M., Oka, H., Kurihara, H., Jpn. J. Appl. Phys. 29, L2380 (1990).Google Scholar
6. Inverson, R. B. and Reif, R., J. Appl. Phys. 57, 5169 (1985).Google Scholar
7. Park, J. W., Moon, D. G., Ahn, B. T., Im, H. B., Lee, K., Thin Solid Films, in press (1994)Google Scholar