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Improving the Crystallization Resistance of Aluminum(III) 8-Hydroxyquinoline-Based Emitting Materials by Entropic Stabilization

Published online by Cambridge University Press:  10 February 2011

Keith A. Higginson
Affiliation:
Nanomaterials and Optoelectronics Laboratory, Department of Chemistry, Polymer Science Program, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136
Baocheng Yang
Affiliation:
Nanomaterials and Optoelectronics Laboratory, Department of Chemistry, Polymer Science Program, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136
Fotios Papadimitrakopoulos
Affiliation:
Nanomaterials and Optoelectronics Laboratory, Department of Chemistry, Polymer Science Program, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136
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Abstract

The morphological stability of evaporated films of aluminum(III) 8-hydroxyquinoline (Alq3) was investigated. Films which were found to be non-crystalline by x-ray diffraction upon deposition, crystallized rapidly upon annealing, especially where defects were present. Blends of Alq3with aluminum(III) 5-methyl-8-hydroxyquinoline were proposed for thermally stable amorphous emitting layers in light-emitting diodes. Films coevaporated at a 1:1 ratio did not show evidence of crystallization or phase separation even after long annealing periods at temperatures as high as 160°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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