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Influence of Electric Field and Temperature on Magnetic Field Induced Prolonged Changes of Electric Parameters of Silicon Systems

Published online by Cambridge University Press:  26 February 2011

Vladimir M Maslovsky
Vladimir M Maslovsky*
Affiliation:
Zelenograd Research Institute of Physical Problems, Moscow 103460, Russia.
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Abstract

Magnetic field induced prolonged changes (MFIPC) of electric parameters of semiconductor systems is the phenomenon that has been recently established experimentally. In this work it is investigated for the first time the influence of electric field and temperature on duration of MFIPC of carrier generation lifetime in Si subsurface region and the influence of temperature on MFIPC of the MOS structure leakage voltage. The value of determined mobility of generated defects corresponds to the diffusion coefficient of vacancy -impurity complexes. These investigations of MFIPC of microstructure confirm that non-equilibrium defects reactions are limited by diffusion (in the absence of external electric field). It is shown that the corresponding diffusion coefficient is about 10−13 cm2s−1 and the magnitude of diffusion activation energy determined from these investigations is in the range 0.45–0.5 eV. This value is nearly the same as the diffusion coefficient of vacancy-impurity complex.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 65
Copyright
Copyright © Materials Research Society 1995

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References

1. Maslovsky, V.M., Postnikov, S.N., in Proceedings of IV International Scientific-technical Seminar On Nontraditional Technologies, Botevgrad 1989 (in Russian) (Sofia-Gorky) 5–14, (1989).Google Scholar
2. Levin, M.N., Maslovsky, V.M., Defect-Interface Interactions (Mater. Res. Soc. Proc. 319, Pittsburgh 1994).Google Scholar
3. Maslovsky, V.M., Klimov, Y.A., Samsonov, N.S., Simanovich, E.V, Fizika itechnika poluprovodnikov, 28, Nº 5, 772–777, (1994)Google Scholar
4. Maslovsky, V.M., Lichmanov, J.O., Samsonov., N.S. Physics Letters A. 197, 253–256 (1995).Google Scholar
5. Corbett, J.W., Verner, I.V. and Gerasimenko, N.N., Chaos and Stability In Defect Processes in Semiconductors. (Trans Tech Publication, Switzerland 1992).Google Scholar
6. Zeldovich, Ya. B., Buchachenko, A.L., Frankevich, E.L., Uspekhi fizicheskih nauk (in Russian) 155, 3–45 (1988).Google Scholar