Hostname: page-component-5c6d5d7d68-ckgrl Total loading time: 0 Render date: 2024-08-15T21:21:57.572Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Film Thickness on the Magnitude and Aging Behavior of the Transverse Piezoelectric Coefficient (d31) of PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

J. F. Shepard Jr ,
F. Chu ,
P. J. Moses  and
S. Trolier-McKinstry
J. F. Shepard Jr
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
F. Chu
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
P. J. Moses
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
S. Trolier-McKinstry
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

The wafer flexure technique has been developed for the rapid measurement (less than 10 minutes) of the d31 coefficient of piezoelectric thin films. The technique is based upon the controlled bending of a clamped silicon substrate coated with a thin piezoelectric film. Flexure of the wafer results in the transfer of biaxial stress from the silicon to the film, and thus the production of an electric charge. The charge produced is used in conjunction with the applied principle stresses to determine the film's transverse piezoelectric coefficient (d31). For this study, the wafer flexure technique was modified from semi-ac operation to a mechanized ac measurement (i.e. electronic pressure oscillation and lock-in charge detection). Modifications made reduce electromagnetic noise and enhance both the resolution and precision of the device. The system was used to characterize the piezoelectric properties of lead zirconate titanate 52/48 thin films between 0.6 and 2.5 μm thick synthesized using a modified sol-gel technique. The transverse piezoelectric constants (d31) of the PZT films were found to range from −60 to −90 pC/N for the 0.6 and 2.5 μm films, respectively. Aging experiments of the d31; coefficients were also conducted and results showed values to be on the order of 4 to 8% per decade.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 415
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Polla, D.L. and Francis, L. F., “Ferroelectric Thin Films in Microelectromechanical Applications,” MRS Bulletin, pp. 59–65, July, 1996.Google Scholar
[2] Nemirovsky, Y., Nemirovsky, A., Muralt, P., and Setter, N., “Design of a Novel Thin-Film Piezoelectric Accelerometer,” Sensors and Actuators, vol. A56, pp. 239–249, 1996.Google Scholar
[3] Itoh, T., Chu, J., Misumi, I., Kataoka, K., and Suga, T., “New Dynamic Scanning Force Microscopes Using Piezoelectric PZT Microcantilevers,” Transducers '97, Chicago, IL, 1997.Google Scholar
[4] Bernstein, J. J. et al., “Micromachined High Frequency Ferroelectric Sonar Transducers,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 44, pp. 960–969, 1997.Google Scholar
[5] Eatough, M. O., Dimos, D., Tuttle, B. A., and Warren, W. L., “A Study of Switching Behavior in Pb(Zr,Ti)O3 Thin Films Using X-Ray Diffraction,” Mat. Res. Soc. Symp. Proc., vol. 361, pp. 111–116, 1995.Google Scholar
[6] Chen, H. D., Udayakumar, K. R., Gaskey, C. J., and Cross, L. E., “Fabrication and Electrical Properties of Lead Zirconate Titanate Thick Films,” J. Am. Ceram. Soc., Vol. 79, pp. 2189–2192, 1996.Google Scholar
[7] Udayakumar, K. R. et al., “Thickness-Dependent Electrical Characteristics of Lead Zirconate Titanate Thin Films,” J. Appl. Phys., Vol. 77, pp. 3981–3986, 1995.Google Scholar
[8] Shepard, J. F. Jr, Moses, P. J., and Trolier-McKinstry, S., “The Wafer Flexure Technique for the Determination of the Transverse Piezoelectric Coefficient (d31) of PZT Thin Films,” submitted to Sensors and Actuators, 1997.Google Scholar
[9] Chu, F., Su, T., and Trolier-McKinstry, S., “Effect of Thickness and Texture on the Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Sol-Gel Processing,” The 8th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Plymouth, Mass., 1997.Google Scholar
[10] Brantley, W. A., “Calculated Elastic Constants for Stress Problems Associated with Semiconductor Devices,” J. Appl. Phys., vol. 44, pp. 534–535, 1973.Google Scholar
[11] Shepard, J. F. Jr, Fan, C., and Trolier-McKinstry, S., “The Effects of Film Thickness on the High and Low-Field Stress Response of Lead Zirconate Titanate Thin Films,” Ferroelectric Thin Films VI, Boston, Mass., 1997.Google Scholar
[12] Shepard, J. F. Jr and Trolier-McKinstry, S., unpublished results, 1997.Google Scholar
[13] Moulson, A. J. and Herbert, J. M., Electroceramie s. London: Chapman and Hall, 1990.Google Scholar
[14] Piezo Kinetics Inc., “Piezo Kinetics Product Specifications,”. Bellefont e, PA.Google Scholar
[15] Kholkin, A. et al., “Interferometrie Study of Piezoelectric Degredation in Ferroelectric Thin Films,” Microelectronic Engineering, vol. 29, pp. 261–264, 1995.Google Scholar
[16] Brown, R. F., “Effect of Two-Dimensional Mechanical Stress on the Dielectric Properties of Poled Ceramic Barium Titanate and Lead Zirconate Titanate,” Can. J. Phys., vol. 39, pp. 741–753, 1961.Google Scholar