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The Influence of Fluorine Desorption from ECR-CVD SiOF Film

Published online by Cambridge University Press:  15 February 2011

Tatsuya Usami ,
Hiraku Ishikawa  and
Hideki Gomi
Tatsuya Usami
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa Kanagawa,229 JAPAN
Hiraku Ishikawa
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa Kanagawa,229 JAPAN
Hideki Gomi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa Kanagawa,229 JAPAN
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Abstract

The influence of fluorine desorption from SiOF films deposited by biased ECR-CVD was studied. It was found that desorbed F atoms from the SiOF film react with Ti suicide film resulting in forming SiF4 gas. The evolution of SiF4 gas caused the peel-off of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 69
Copyright
Copyright © Materials Research Society 1997

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References

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