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Influence of Neutron Transmutation Doping on Optical Properties of Ge nanocrystals Prepared by Ion implantation

Published online by Cambridge University Press:  26 February 2011

Shaobo Dun ,
Tiecheng Lu ,
Qiang Hu ,
Ningkang Huang ,
Songbao Zhang ,
Bin Tang ,
Junlong Dai ,
Lev Resnick ,
Issai Shlimak  and
Sha Zhu
...Show all authors
Shaobo Dun
Affiliation:
Shaobo_dun@163.com, Sichuan University, Department of Physics, China, People's Republic of
Tiecheng Lu
Affiliation:
lutiecheng@vip.sina.com, Sichuan University, Department of Physics, China, People's Republic of
Qiang Hu
Affiliation:
Sd3011800@163.com, Sichuan University, Department of Physics, China, People's Republic of
Ningkang Huang
Affiliation:
nkhuang@sina.com, Sichuan University, Department of Physics, China, People's Republic of
Songbao Zhang
Affiliation:
sbzhang@163.com, China Academy of Engineering Physics, Institute of Nuclear Physics and Chemistry, China, People's Republic of
Bin Tang
Affiliation:
btang@sina.com, China Academy of Engineering Physics, Institute of Nuclear Physics and Chemistry, China, People's Republic of
Junlong Dai
Affiliation:
jldai@163.com, China Academy of Engineering Physics, Institute of Nuclear Physics and Chemistry, China, People's Republic of
Lev Resnick
Affiliation:
resnicl@biu.ac.il, Bar-Ilan University, Department of Physics, Israel
Issai Shlimak
Affiliation:
shlimai@biu.ac.il, Bar-Ilan University, Department of Physics, Israel
Sha Zhu
Affiliation:
szhu@umich.edu, University of Michigan, Department of Neclear Engineering and Radiological Sciences, United States
Qiangmin Wei
Affiliation:
qwei@umich.edu, University of Michigan, Department of Neclear Engineering and Radiological Sciences, United States
Lumin Wang
Affiliation:
lmwang@umich.edu, University of Michigan, Department of Neclear Engineering and Radiological Sciences, United States
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Abstract

Ge nanocrystals embedded in an amorphous SiO2 film on Si matrix were prepared by ion implantation and subsequent annealing. Neutron transmutation doping (NTD) technique was used for doping Ge nanocrystals with As impurities. The microstructure, phase and photoluminescence of NTDed Ge nanocrystals were analyzed and compared with undoped Ge nanocrystals. A new photoluminescence peak related to As impurities was found. It is discovered that impurities are expelled from larger clusters resulted from Ge nanocrystal aggregation on the sample surface. To prevent nanocrystal aggregation and assure uniform doping of As, it is necessary to adopt appropriate implantation and annealing conditions.

Keywords

neutron irradiationGenanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO14-11
Copyright
Copyright © Materials Research Society 2006

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