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Influence of Plasma Excitation Frequency on Deposition Rate and on Film Properties for Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

H. Curtins ,
N. Wyrsch ,
M. Favre ,
K. Prasad ,
M. Brechet  and
A. V. Shah
H. Curtins
Affiliation:
Institut de Microtechnique, Breguet 2, CH-2000 Neuchatel
N. Wyrsch
Affiliation:
Institut de Microtechnique, Breguet 2, CH-2000 Neuchatel
M. Favre
Affiliation:
Institut de Microtechnique, Breguet 2, CH-2000 Neuchatel
K. Prasad
Affiliation:
Institut de Microtechnique, Breguet 2, CH-2000 Neuchatel
M. Brechet
Affiliation:
Institut de Microtechnique, Breguet 2, CH-2000 Neuchatel
A. V. Shah
Affiliation:
Institut de Microtechnique, Breguet 2, CH-2000 Neuchatel
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Abstract

The preparation of hydrogenated amorphous silicon by the radio-frequency (RF) glow discharge technique is shown to be strongly dependent on the plasma excitation frequency. We have investigated the influence of this parameter on the deposition rate, on the hydrogen content and on the opto-electronic properties of the amorphous silicon films, over the range 25 to 150 MHz. A large variation of the deposition rate is observed, while most of the material properties remain practically unchanged. The results should be of considerable interest for mass production of low-cost amorphous silicon thin film devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 249
Copyright
Copyright © Materials Research Society 1987

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References

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