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Influence of Rapid Thermal Annealing on Recombination Properties of Polycrystalline Silicon
Published online by Cambridge University Press: 03 September 2012
Abstract
Rapid thermal annealing was shown by EBIC to increase the minority-carrier diffusion length in cast polycrystalline silicon. The beneficial effect is due to a deactivation of intragrain defects (mainly dislocations) and is stable against post-RTA annealing up to at least 600 °C/ 10 min.
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- Copyright © Materials Research Society 1992
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