Hostname: page-component-7479d7b7d-qlrfm Total loading time: 0 Render date: 2024-07-10T21:16:48.682Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Substrate Patterning on Threading Dislocation Density and Residual Stress in GaAs/Si Heteroepitaxial Layers.

Published online by Cambridge University Press:  28 February 2011

Hyunchul Sohn ,
Eicke R. Weber ,
Jay Tu ,
Henry P. Lee  and
Shy Wang
Hyunchul Sohn
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley
Eicke R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley
Jay Tu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
Henry P. Lee
Affiliation:
Bell Communications Research, 331 Newman, Spring Road, Red Bank, NJ 07701
Shy Wang
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley
Get access

Abstract

The growth of GaAs films by MBE on mesa-type patterned Si substrates has been investigated. Mesa widths were varied from 10 µm to 200 µm and were prepared using chemical etching with Si3N4 masks and reactive ion etching. The residual stress in the epitaxial layer was estimated using low temperature (7K) photoluminescence and the defect distribution was studied by cross sectional TEM, dislocation densities were in addition determined by etch pits. The residual stress and the dislocation density decreased monotonically with the reduction of growth area. By the incorporation of strained layers with the reduction of growth area, the etch pit density in GaAs layers on mesas was reduced further.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 45
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lee, Henry P., Liu, Xiaoming, Lin, Hong, Smith, John S., and Wang, Shyh, Appl.Phys. Lett. 53,2394(1988)Google Scholar
2. Ziel, J.P. van der, Chand, Naresh, and Weiner, J.S., J.Appl.Phys. 66,1195(1989)Google Scholar
3. Miller, D.L. and Asbeck, D.M., J.Crystal Growth 81, 368(1987)Google Scholar
4. Pollak, F.H. and Cardona, M., Phys.Rev. 172, 816 (1968)Google Scholar
5. Chandrasekhar, M. and Pollak, F.H., Phys. Rev. B15, 2127(1977)Google Scholar
6. Fisher, R., Neumann, D., Zabel, H., Morkoc, H.,Choi, C. and Otsuka, N., Appl.Phys.Lett., 48, 1223(1986)Google Scholar
7. El-Masry, N.A., Tam, J.C.L. and Bedair, S.M., Appl.Phys.Lett. 55, 1442(1989)Google Scholar
8. Liliental-Weber, Z., Weber, E.R., Washburn, J., Liu, T.Y., and Kroemer, H., in Heteroepitaxy on Si UI, Fan, J.C.C., Phillips, J.M., and Tsaur, B.Y., eds. (MRS, Pittsburg, PA, 1987) P.91 Google Scholar
9. Mattews, J.W. and Blakeslee, A.E., J.Crystal Growth 27, 118(1974)Google Scholar
10. People, R. and Bean, J.C., Appl.Phys.Lett 48, 538(1986)Google Scholar