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InGaN thin films grown by RF sputtering for HIT solar cells

Published online by Cambridge University Press:  30 March 2015

Pratheesh Jakkala  and
Martin E Kordesch
Pratheesh Jakkala
Affiliation:
Department of Physics & Astronomy, Ohio University, Athens, OH, 45701, USA
Martin E Kordesch
Affiliation:
Department of Physics & Astronomy, Ohio University, Athens, OH, 45701, USA
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Abstract

The wide range of optical band gaps of InGaN thin films led to considerable research in increasing the efficiency of solar cells. In this study, we present electrical, optical and structural properties of InGaN thin films grown by in situ rf sputtering method. Several samples of InGaN were deposited on aluminosilicate glass and silicon(111) substrates at different temperatures and varying N2 flow ratio. Growth temperatures are 35 °C, 150 °C, 200 °C. Aluminum metal contacts are deposited using DC sputtering method. Resistivity, mobility, conductivity values and their changes with respect to temperature are recorded using hall-effect measurement system. Band gap values and their changes with respect to N2 flow ratio in ( Ar+N2) mixture were calculated using UV spectrophotometer and tauc plots. Atomic composition was calculated using Energy-dispersive X-ray spectroscopy (EDX) analysis. Amorphous/crystalline nature of the samples are verified using XRD analysis.

Keywords

sputteringnitridephotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1738: Symposium V – Sustainable Solar-Energy Conversion Using Earth-Abundant Materials , 2015 , mrsf14-1738-v05-32
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

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