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In-situ real time studies of nickel silicide formation

Published online by Cambridge University Press:  10 February 2011

M. Tinani ,
E.A. Irene ,
Y.Z. Hu  and
S.P. Tay
M. Tinani
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599
E.A. Irene
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599
Y.Z. Hu
Affiliation:
STEAG RTP Systems Inc., 4425 Fortran Dr., San Jose, CA 95134-2300
S.P. Tay
Affiliation:
STEAG RTP Systems Inc., 4425 Fortran Dr., San Jose, CA 95134-2300
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Abstract

NiSi, with its low resistivity and wide processing window (350 - 750°C), is an attractive candidate for use as a gate contact material. In order to follow the interface reaction that leads to the formation of NiSi in real time, ellipsometry and atomic force microscopy (AFM) were used to study changes on the surface resulting from the reaction between Ni and Si for various times and temperatures, and Rutherford Backscattering spectrometry (RBS) to determine compositional changes in the forming silicides. We report that ellipsometry can be used to monitor the various Ni-Si phases forming in real time, and we have observed agglomeration of the silicide, which has been reported to occur at 1000°C, at temperatures, as low as 550°C for long time anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 121
Copyright
Copyright © Materials Research Society 1999

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References

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